Pure Power, Natural Sound. It’s class AGD. PWM stage and output filter re-engineered with more advanced materials and new design techniques. Sold in Pair.
The new AGD GaNTubeTM 120KT MKIV represents the fourth generation of the AGD GaNTube platform since its introduction in 2020. It is the result of a continuous journey of innovation and refinement, developed to merge perfection and beauty in the art of audio reproduction.
At the core of the design is a pair of the latest and most advanced 650V-rated HEMT Gallium Nitride power MOSFETs. These new-generation devices are fundamental to the improved efficiency, greater power capability, speed, precision, and reference-grade musical performance of the AGD Gran Vivace MKIV.
Refined thermal management, an improved low-noise linear regulator stage, and higher-reliability passive components have each been carefully engineered to elevate overall performance, while preserving the elegance, simplicity, and upgradeability that define the AGD design philosophy.
The refinement of upper-frequency operation delivers a direct and positive impact on the overall sonic and musical presentation, with exceptional realism, transparency, and natural expression through the mid and high frequencies.
The GaNTube 120KT MKIV is a refined expression of AGD’s vision, pushing performance, transparency, and musical realism to a new level.
Technical Highlights
New Gallium Nitride power stage based on the latest 650V GaN HEMT HV MOSFET devices.
Enhanced thermal design.
Improved low-noise linear regulator stage.
Redesigned power stage with optimized layout.
New linear supply rails with increased capacitor bank and long-life, high-reliability-grade passive components.
400W into 4 ohms.
800kHz PWM switching frequency.
60A peak current capability.
Class-D amplifier topology.
Designed and manufactured in California, USA.
New 600W continuous, fully GaN-based power supply, capable of delivering up to 6kW peak power (100ms, 60Apk).
The new advanced AGD PS design has a resonant topology for the primary stage and a dual-stage PFC front-end, (which ensures and optimal sinusoidal current absorption and enhanced voltage supply stability).
Unlike conventional designs, this 100% GaN implementation provides ultra-fast transient response, dramatically reduced switching losses, and exceptional power density.
The result is an amplifier that responds instantly to dynamic demands while maintaining absolute control and low noise.